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VHF Power MOS Transistor
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
Applications
- Broadcast transmitters in the VHF frequency range.